Toshiba Joins DoE Center Seeking Semiconductor Technology Breakthrough

President Obama is promoting the development of high-tech institutes as a way of generating more U.S. manufacturing jobs. Houston-based Toshiba International has signed on a participant in one such institute, under the Department of Energy.


Wide Bandgap Semiconductors, by the U.S. Department of Energy

Toshiba is one of 25 public- and private-sector entities joining forces to develop the next generation of semiconductor technology. Known as wide bandgap semiconductors, the technology would allow companies to make electronic components smaller, faster, and more efficient than semiconductors made with silicon.

Technology executive Mark Rayner says the new semiconductor would cut down on energy waste in Toshiba motors.

“Here in Houston, we’ve got almost 2,000 people located at the corner of West Little York and Eldridge. Those people are every day putting together high-quality power electronic devices. So we plan to be on the cutting edge as we move into the future, and over the next five years, to support that, we’ll need these high quality wide bandgap devices.”

The manufacturing institute — the first of more than forty such high-tech hubs — will be based at North Carolina State University

Bio photo of Andrew Schneider

Andrew Schneider

Business Reporter

Andrew Schneider joined KUHF in January 2011, after more than a decade as a print reporter for The Kiplinger Letter...